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I work in a semiconductor fabrication company and am working with our wafer probe test group to drive improvements in GRR studies. Previous studies were based on creating a 'loadboad' of 10 precision resistors and testing the resistors. Gage R method was used to calculate %GRR. The problem with this approach is that the Gage R method should not be used for final acceptance without more complete MSA methods. Our wafer probe operations are operator independent. 100% of all die are tested to datasheet parameters. I am looking for suggestions from the forum on an acceptable approach that could be used. The problem we are faced with is using actual production wafers for the testing. After probing die on the wafer 3X, bond pad damage is introduced which could ultimately introduce error in measurements. If anyone has any thoughts, I'd sure appreciate your inputs.